Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC
US8030668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2007 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Dec 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.