Efficient methodology for the accurate generation of customized compact model parameters from electrical test data
US8032349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2007 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Apr 28, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are embodiments of an automated, fast and efficient method of generating a customized compact model that represents a semiconductor device at the chip, wafer or multi-wafer level in a specific manufacturing environment. Specifically, measurement data is collected from a specific manufacturing environment and sorted by channel lengths. Then, an optimizer is used to generate customized modeling parameters based on the measurement data. The optimization processes is a multi-step process. First, a first set of modeling parameters is generated based on measurement data associated with a long channel length. Second, a second set of modeling parameters is generated based on the first set and on measurement data associated with a short channel length. Finally, the customized modeling parameters are generated based on both the first set and the second set. The customized modeling parameters are used to generate a customized compact device model representative of the specific manufacturing environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.