Sim Y. Loo
3Patents
1h-index
11Co-inventors
37Inventor score
Filing activity: Jan 25, 2007 → Jan 6, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8626480B2 | Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factors | Physics | 18 | Active |
| US9639652B2 | Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factors | Physics | 1 | Active |
| US8032349B2 | Efficient methodology for the accurate generation of customized compact model parameters from electrical test data | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.