Microelectronic package with thermal access
US8034665B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2010 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Apr 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a microelectronic package including the steps of providing a three-layer metal plate, having a first layer, a second layer and a third layer. A plurality of conductive elements is formed from the first layer of the metal plate. A dielectric sheet is attached to the first layer of the metal plate, such that the dielectric sheet is remote from the third layer. A plurality of conductive features is then formed from the third layer of the metal plate which are also remote from the dielectric sheet. A microelectronic element is next electrically conducted to the conductive elements and a heat spreader is thermally connected the microelectronic element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.