Power device with trenches having wider upper portion than lower portion

US8034682B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Robert Herrick · Lompoc, US
• Becky Losee · Cedar Hills, US
• Dean E. Probst · West Jordan, US

Key dates

• Filing date: Sep 16, 2010
• Grant date: Oct 11, 2011
• Expiry date: Sep 16, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/905

Abstract

A method of forming a semiconductor device includes the following. Removing portions of a silicon layer such that a trench having sidewalls which fan out near the top of the trench to extend directly over a portion of the silicon layer is formed in the silicon layer; and forming source regions in the silicon layer adjacent the trench sidewall such that the source regions extend into the portions of the silicon layer directly over which the trench sidewalls extend.