Patent · US Active

Method for fabricating a semiconductor device and the semiconductor device made thereof

US8034689B2 · kind B2 · utility

9Cited by

4References

24Claims

0Family size

Assignees

IMEC · BE
STMicroelectronics (Crolles 2) SAS · FR

Inventors

Damien Lenoble · Wellin, BE
Rita Rooyackers · Kessel-Lo, BE

Key dates

Filing date	Dec 19, 2008
Grant date	Oct 11, 2011
Priority date	—
Expiry date	Jun 2, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6213
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating a semiconductor device and the device made thereof are disclosed. In one aspect, the method includes providing a substrate comprising a semiconductor material. The method further includes patterning at least one fin in the substrate, the fin comprising a top surface, at least one sidewall surface, and at least one corner. A supersaturation of point defects is created in the at least one fin. The at least one fin is annealed and then cooled down such that semiconductor atoms of the semiconductor material migrate via the point defects.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.