Contact formation
US8034706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2010 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | May 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes various method of contact embodiments. One such method embodiment includes creating a trench in an insulator stack material of a particular thickness and having a portion of the trench positioned between two of a number of gates. This method includes depositing a filler material in the trench and etching the filler material to a particular depth that is less than the particular thickness of the insulator stack material. This method also includes depositing a spacer material to at least one side surface of the trench to the particular depth of the filler material and depositing a conductive material into the trench over the filler material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.