Magnetic memory device
US8035145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2010 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | May 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3281
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device is provided. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.