Semiconductor devices

US8035190B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Xuefeng Liu · Gaithersburg, US
• Robert M. Rassel · Colchester, US
• Steven H. Voldman · South Burlington, US

Key dates

• Filing date: Mar 17, 2010
• Grant date: Oct 11, 2011
• Expiry date: Mar 17, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/713

Abstract

A device comprises a first sub-collector formed in an upper portion of a substrate and a lower portion of a first epitaxial layer and a second sub-collector formed in an upper portion of the first epitaxial layer and a lower portion of a second epitaxial layer. The device further comprises a reach-through structure connecting the first and second sub-collectors and an N-well formed in a portion of the second epitaxial layer and in contact with the second sub-collector and the reach-through structure. The device further comprises N+ diffusion regions in contact with the N-well, a P+ diffusion region in contact with the N-well, and shallow trench isolation structures between the N+ and P+ diffusion regions.