Method of fabricating capacitor in semiconductor device
US8035193B2 · kind B2 · utility
2Cited by
1References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 23, 2008 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Nov 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZ film is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuXTiYOZ film during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.