EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact
US8035927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2008 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Jul 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.