Lorentz magnetoresistive sensor with integrated signal amplification
US8035932B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Sep 20, 2007 |
| Grant date | Oct 11, 2011 |
| Priority date | — |
| Expiry date | Jul 5, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0002
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.