Methods of atomic layer deposition using hafnium and zirconium-based precursors

US8039062B2 · kind B2 · utility

Assignee

• Sigma-Aldrich Co. LLC · US

Inventors

• Peter Nicholas Heys · Crewe, US
• Andrew Kingsley · Chester, GB
• Fuquan Song · Tenbury Wells, GB
• Paul M. Williams · Bebington, GB
• Thomas Leese · Hanover, US
• Hywel Owen Davies · Mold, GB
• Rajesh Odedra · Altrincham, GB

Key dates

• Filing date: Sep 10, 2008
• Grant date: Oct 18, 2011
• Expiry date: Jul 31, 2029

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45553
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II:wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III:wherein: M is Hf or Zr; R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.