Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
US8039176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2009 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Jan 22, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.