Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors

US8039331B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Scott D. Allen · Ledgewood, US
• Cyril Cabral, Jr. · Ossining, US
• Kevin K. Dezfulian · Arlington, US
• Sunfei Fang · Lagrangeville, US
• Brian J. Greene · Wappingers Falls, US
• Rajarao Jammy · Hopewell Junction, US
• Christian Lavoie · Ossining, US
• Zhijiong Luo · Poughkeepsie, US
• Hung Y. Ng · New Milford, US
• Chun-Yung Sung · Poughkeepsie, US
• Clement Wann · Carmel, US
• Huilong Zhu · Poughkeepsie, US

Key dates

• Filing date: May 14, 2008
• Grant date: Oct 18, 2011
• Expiry date: Jan 25, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.