Scott D. Allen
13Patents
6h-index
38Co-inventors
66Inventor score
Filing activity: Nov 23, 1993 → Jan 31, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8767593B1 | Method for managing, scheduling, monitoring and controlling audio and video communication and data collaboration | General | 22 | Active |
| US8625769B1 | System for managing, scheduling, monitoring and controlling audio and video communication and data collaboration | General | 18 | Active |
| US7786017B1 | Utilizing inverse reactive ion etching lag in double patterning contact formation | Electricity | 13 | Active |
| US5557528A | Task prioritization for a tape storage system | Physics | 10 | Expired |
| US7030008B2 | Techniques for patterning features in semiconductor devices | Emerging Cross-Sectional Technologies | 9 | Expired |
| US8849783B2 | Storage tape analytics user interface | Physics | 9 | Active |
| US7494919B2 | Method for post lithographic critical dimension shrinking using thermal reflow process | Physics | 3 | Expired |
| US7545041B2 | Techniques for patterning features in semiconductor devices | Emerging Cross-Sectional Technologies | 3 | Active |
| US9093387B1 | Metallic mask patterning process for minimizing collateral etch of an underlayer | Electricity | 1 | Active |
| US7354867B2 | Etch process for improving yield of dielectric contacts on nickel silicides | Electricity | 1 | Expired |
| US7410852B2 | Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors | Electricity | 0 | Active |
| US8039331B2 | Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors | Electricity | 0 | Active |
| US7560387B2 | Opening hard mask and SOI substrate in single process chamber | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.