Shared gate for conventional planar device and horizontal CNT

US8039334B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Toshiharu Furukawa · South Burlington, US
• Mark C. Hakey · Saint Albans, US
• Steven J. Holmes · Colchester, US
• David V. Horak · South Burlington, US
• Charles W. Koburger, III · Delmar, US
• Mark E. Masters · South Burlington, US

Key dates

• Filing date: Oct 12, 2010
• Grant date: Oct 18, 2011
• Expiry date: Oct 12, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/763
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

A semiconductor structure in which a planar semiconductor device and a horizontal carbon nanotube transistor have a shared gate and a method of fabricating the same are provided in the present application. The hybrid semiconductor structure includes at least one horizontal carbon nanotube transistor and at least one planar semiconductor device, in which the at least one horizontal carbon nanotube transistor and the at least one planar semiconductor device have a shared gate and the at least one horizontal carbon nanotube transistor is located above a gate of the at least one planar semiconductor device.