Multilayered semiconductor wafer and process for manufacturing the same

US8039361B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Brian Murphy · Pfarrkirchen, DE
• Reinhold Wahlich · Burghausen, DE

Key dates

• Filing date: Aug 22, 2007
• Grant date: Oct 18, 2011
• Expiry date: Mar 25, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a process for manufacturing a multilayered semiconductor wafer comprising a handle wafer (5) and a layer (40) comprising silicon carbide bonded to the handle wafer (5), the process comprising the steps of: a) providing a handle wafer (5), b) providing a donor wafer (1) comprising a donor layer (2) and a remainder (3) of the donor wafer, the donor layer (2) comprising monocrystalline silicon, e) bonding the donor layer (2) of the donor wafer (1) to the handle wafer (5), and f) removing the remainder (3) of the donor wafer in order to expose the donor layer (2) which remains bonded to the handle wafer (5), the process being characterized by further steps of c) implanting carbon ions into the donor layer (2) in order to produce a layer (4) comprising implanted carbon, and d) heat-treating the donor layer (2) comprising the layer (4) comprising implanted carbon in order to form a silicon carbide donor layer (44) in at least part of the donor layer (2). The invention also relates to a multilayered semiconductor wafer comprising a handle wafer (5) and a silicon carbide donor layer (44) which is bonded to the handle wafer (5), wherein the silicon carbide donor lay…