Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
US8039854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2009 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Mar 6, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.