Xin Wang
11Patents
5h-index
15Co-inventors
55Inventor score
Filing activity: Sep 28, 2006 → Mar 1, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7521274B2 | Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material | Emerging Cross-Sectional Technologies | 68 | Active |
| US8039854B2 | Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material | Emerging Cross-Sectional Technologies | 17 | Active |
| US8410496B2 | Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material | Emerging Cross-Sectional Technologies | 14 | Active |
| US8679859B2 | Method for functionalizing materials and devices comprising such materials | Chemistry; Metallurgy | 13 | Active |
| US8188513B2 | Nanowire and larger GaN based HEMTS | Electricity | 11 | Active |
| US8716045B2 | Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material | Emerging Cross-Sectional Technologies | 3 | Active |
| US7687352B2 | Trench MOSFET and method of manufacture utilizing four masks | Electricity | 2 | Active |
| US8343823B2 | Nanowire and larger GaN based HEMTs | Electricity | 1 | Active |
| US7759238B2 | Method for fabricating semiconductor device capable of adjusting the thickness of gate oxide layer | Emerging Cross-Sectional Technologies | 1 | Active |
| US7682929B2 | Method and structure for double lining for shallow trench isolation | Electricity | 0 | Active |
| US7799642B2 | Trench MOSFET and method of manufacture utilizing two masks | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.