Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
US8039868B2 · kind B2 · utility
10Cited by
15References
18Claims
0Family size
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Key dates
| Filing date | Dec 23, 2008 |
| Grant date | Oct 18, 2011 |
| Priority date | — |
| Expiry date | Sep 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. Further, the first and the second SCRs each include at least one component commonly shared between the first and the second SCRs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.