Semiconductor substrate and method for production thereof

US8043929B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Josef X. Brunner · Chur, CH
• Hiroyuki Deai · Saitama, JP
• Atsushi Ikari · Shunan, JP
• Martin Grassl · Miami, US
• Atsuki Matsumura · Futtsu, JP
• Wilfried von Ammon · Burghausen, DE

Key dates

• Filing date: May 14, 2008
• Grant date: Oct 25, 2011
• Expiry date: Apr 2, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02236
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.