Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures
US8043968B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2010 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Apr 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes a first portion formed adjacent to the copper layer and a second portion formed on the first portion, the first portion having improved adhesion to copper relative to the second portion and both portions are formed having resistance to copper diffusion. The invention also includes several embodiments for constructing such structures. Adhesion of the dielectric barrier stack to copper can be increased by plasma treating or ion implanting selected portions of the dielectric barrier stack with adhesion enhancing materials to increase the concentration of such materials in the stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.