Low density drain HEMTs

US8044432B2 · kind B2 · utility

Assignee

• The Hong Kong University of Science and Technology

Inventors

• Jing Chen · Hong Kong, CN
• Kei May Lau · Kowloon, CN

Key dates

• Filing date: Nov 29, 2006
• Grant date: Oct 25, 2011
• Expiry date: Nov 29, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without the use of a field plate electrode. The off-state breakdown voltage can be improved and current collapse can be completely suppressed in LDD-HEMTs with no significant degradation in gains and cutoff frequencies.