Semiconductor device
US8044482B2 · kind B2 · utility
2Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2009 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Aug 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/05042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an insulating film formed on a semiconductor substrate, a contact wiring formed in the insulating film, a protective film formed on the contact wiring and the insulating film, an opening portion formed in the protective film, the contact wiring being exposed through the opening portion, and an electrode pad formed in the opening portion, the electrode pad being electrically connected to the contact wiring. A region where the contact wiring is not provided is present below the opening portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.