Self aligned diode fabrication method and self aligned laser diode
US8045595B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 15, 2006 |
| Grant date | Oct 25, 2011 |
| Priority date | — |
| Expiry date | Nov 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and sacrificial layer. A ridge is formed in the laser diode epitaxial structure, the stack being the mask forming the ridge. An insulating layer is deposited over the ridge and at least a portion of the sacrificial layer is removed. At least a portion of the insulating thin film at the top of the stack is also removed. A pad metal is deposited in electrical contact with the contact and is insulated from the ridge and laser diode epitaxial structures by the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.