Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating
US8048615B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2006 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Jan 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.