Patent · US Active

Magnetic RAM

US8048685B2 · kind B2 · utility

2Cited by
6References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 22, 2010
Grant dateNov 1, 2011
Priority date
Expiry dateFeb 22, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B61/22
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first magnetic portion and a portion of the first insulating layer around the first magnetic portion, the non-magnetic portion being interposed between the first and second magnetic portions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.