Magnetic RAM
US8048685B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 22, 2010 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Feb 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first magnetic portion and a portion of the first insulating layer around the first magnetic portion, the non-magnetic portion being interposed between the first and second magnetic portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.