Method of fabricating nitride-based semiconductor optical device
US8048702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2010 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Apr 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium source to a reactor. The barrier layer comprises a first gallium nitride-based semiconductor. After the growth of the barrier layer, a nitrogen material and an indium material are supplied to the reactor without supply of the gallium source to perform a preflow of indium. Immediately after the preflow, a well layer is grown on the barrier layer at a second temperature while supplying an indium source and the gallium source to the reactor. The well layer comprises InGaN, and the second temperature is lower than the first temperature. The gallium source and the indium source are supplied to the reactor during plural first periods of the step of growing the well layer to grow plural InGaN layers, respectively. The indium material is supplied to the reactor without supply of the gallium source during the second period of the step of growing the well layer. The second period is between the first periods. The well layer comprises the plural InGaN layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.