Semiconductor device and method of fabricating the same
US8048737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Mar 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
The invention relates to a semiconductor device and a method of fabricating the same, wherein a storage node contact hole is made large to solve any problem caused during etching a storage node contact hole with a small CD, a landing plug is formed to lower plug resistance, and the SAC process is eliminated at the time of the bit line formation. A method of fabricating a semiconductor device according to the invention comprises: forming a device isolation film for defining a multiplicity of active regions in a semiconductor substrate; forming a multiplicity of buried word lines in the semiconductor substrate; forming a storage node contact hole for exposing a storage node contact region of two adjoining active regions; filling the storage node contact hole with a storage node contact plug material; forming a bit-line groove for exposing a bit-line contact region of the active region and splitting the storage node contact plug material into two; and burying the bit line into the bit-line groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.