Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same
US8048783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Feb 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.