Inventor · Yongin-si, KR

Maxim Lisachenko

10Patents
2h-index
25Co-inventors
43Inventor score

Filing activity: Dec 30, 2009 → Mar 15, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US8048783B2 Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same Electricity 447 Active
US8294158B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor Electricity 4 Active
US8409887B2 Organic light emitting diode display device and method of fabricating the same Electricity 2 Active
US9117798B2 Thin film transistor, method of fabricating the same and organic light emitting diode display device including the same Electricity 1 Active
US9035311B2 Organic light emitting diode display device and method of fabricating the same Electricity 1 Active
US8890165B2 Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same Electricity 1 Active
US8546248B2 Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same Electricity 0 Active
US8247316B2 Method for fabricating a transistor including a polysilicon layer formed using two annealing processes Electricity 0 Active
US8278716B2 Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor Electricity 0 Active
US8507914B2 Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.