Method for treating non-planar structures using gas cluster ion beam processing
US8048788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Oct 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces including one or more first surfaces lying substantially parallel to a first plane parallel with said substrate and one or more second surfaces lying substantially perpendicular to the first plane. Additionally, the method comprises directing a gas cluster ion beam (GCIB) formed from a material source toward the substrate with a direction of incidence, and orienting the substrate relative to the direction of incidence. The method further comprises treating the one or more second surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.