Patent · US Active

Substrate with feedthrough and method for producing the same

US8048801B2 · kind B2 · utility

0Cited by

13References

24Claims

0Family size

Assignees

Infineon Technologies AG · DE
Qimonda AG · DE

Inventors

Stephan Dertinger · Tokyo, JP
Alfred Martin · Munich, DE
Barbara Hasler · Munich, DE
Grit Sommer · Grafing, DE
Florian Binder · Traunstein, DE

Key dates

Filing date	May 21, 2007
Grant date	Nov 1, 2011
Priority date	—
Expiry date	Jul 11, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19041
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A substrate with first and second main surfaces includes at least one channel extending from the first main surface to the second main surface. The at least one channel includes a first cross-sectional area at a first location and a second cross-sectional area at a second location. An electrically conductive first material is disposed in the at least one channel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.