Intermetal stack for use in a photovoltaic cell
US8049104B2 · kind B2 · utility
2Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Sep 30, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductive oxide layer serving as a quarter-wave plate, a low resistance layer, an adhesion layer to help adhesion to the receiver element, and may also include a barrier layer to prevent or impede unwanted diffusion within the stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.