Phase change memory device and method for manufacturing the same
US8049199B2 · kind B2 · utility
3Cited by
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3Claims
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Key dates
| Filing date | Jul 8, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Jun 19, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device and a method for manufacturing the same. The method includes the steps of defining bottom electrode contact holes by removing portions of an insulation layer, to expose bottom electrodes, on a semiconductor substrate on which the bottom electrodes and the insulation layer are sequentially formed; forming amorphous silicon spacers on inner sidewalls of the bottom electrode contact holes; and forming bottom electrode contacts in the bottom electrode contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.