Phase change memory device having phase change material layer containing phase change nano particles
US8049202B2 · kind B2 · utility
4Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Mar 6, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include a first electrode and a second electrode facing each other, a phase change material layer containing phase change nano particles interposed between the first electrode and the second electrode and/or a switching device electrically connected to the first electrode. The phase change material layer may include an insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.