Patent · US Active

Nanoelectronic structure and method of producing such

US8049203B2 · kind B2 · utility

56Cited by

32References

33Claims

0Family size

Assignee

QUNANO AB · SE

Inventors

Lars Samuelson · Malmö, SE
Patrik Svensson · Palo Alto, US
Jonas Ohlsson · Malmö, SE
Truls Lowgren · Palo Alto, US

Key dates

Filing date	Jun 15, 2007
Grant date	Nov 1, 2011
Priority date	—
Expiry date	Sep 4, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/938
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.