Bipolar device having buried contacts
US8049282B2 · kind B2 · utility
4Cited by
14References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2006 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Dec 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention, in one aspect, provides a semiconductor device that includes a collector for a bipolar transistor located within a semiconductor substrate and a buried contact, at least a portion of which is located in the collector to a depth sufficient that adequately contacts the collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.