Through-silicon via with scalloped sidewalls
US8049327B2 · kind B2 · utility
27Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2009 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Dec 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having one or more through-silicon vias (TSVs) is provided. The TSVs are formed such that sidewalls of the TSVs have a scalloped surface. In an embodiment, the sidewalls of the TSVs are sloped wherein a top and bottom of the TSVs have different dimensions. The TSVs may have a V-shape wherein the TSVs have a wider dimension on a circuit side of the substrate, or an inverted V-shape wherein the TSVs have a wider dimension on a backside of the substrate. The scalloped surfaces of the sidewalls and/or sloped sidewalls allow the TSVs to be more easily filled with a conductive material such as copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.