Conductive organic nonvolatile memory device having nanocrystals surrounded by amorphous barrier
US8050081B2 · kind B2 · utility
2Cited by
3References
9Claims
0Family size
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Key dates
| Filing date | Apr 23, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Oct 29, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.