Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device
US8050084B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2010 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Sep 29, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes a memory cell array including a plurality of nonvolatile memory cells each having a resistance corresponding to one of a plurality of first resistance distributions, a temperature compensation circuit including one or more reference cells each having a resistance corresponding to one among one or more second resistance distributions, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit being adapted to supply compensation current to a sensing node, an amount of the compensation current varying based on the resistance of each reference cell, and the sense amplifier being adapted to compare the level of the sensing node with a reference level and to output a comparison result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.