Distortion estimation and cancellation in memory devices
US8050086B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2007 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Mar 17, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.