Semiconductor device
US8050305B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jun 3, 2008 |
| Grant date | Nov 1, 2011 |
| Priority date | — |
| Expiry date | Apr 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3059
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0<x1<1, 0≦x2<1, 0<x3<1, x1+x2+x3=1) and a second semiconductor layer mainly including Bex4Mgx5Znx6Te (0<x4<1, 0<x5<1, 0≦x6<1, x4+x5+x6=1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.