Structural modification using electron beam activated chemical etch
US8052885B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2007 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Mar 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31744
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.