Photoelectrochemical etching of P-type semiconductor heterostructures
US8053264B2 · kind B2 · utility
1Cited by
4References
17Claims
0Family size
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Key dates
| Filing date | May 12, 2009 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Jul 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.