Mathew C. Schmidt
51Patents
13h-index
35Co-inventors
80Inventor score
Filing activity: Dec 11, 2007 → Jun 9, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8351478B2 | Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates | Electricity | 235 | Active |
| US8355418B2 | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates | Electricity | 233 | Active |
| US8252662B1 | Method and structure for manufacture of light emitting diode devices using bulk GaN | Electricity | 215 | Active |
| US8451876B1 | Method and system for providing bidirectional light sources with broad spectrum | Electricity | 138 | Active |
| US8634442B1 | Optical device structure using GaN substrates for laser applications | Electricity | 73 | Active |
| US8048225B2 | Large-area bulk gallium nitride wafer and method of manufacture | Chemistry; Metallurgy | 64 | Active |
| US8306081B1 | High indium containing InGaN substrates for long wavelength optical devices | Electricity | 60 | Active |
| US8492185B1 | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices | Electricity | 38 | Active |
| US9543738B2 | Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates | Electricity | 36 | Active |
| US9048170B2 | Method of fabricating optical devices using laser treatment | Electricity | 25 | Active |
| US8975615B2 | Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material | Electricity | 20 | Active |
| US9071039B2 | Optical device structure using GaN substrates for laser applications | Electricity | 14 | Active |
| US9184563B1 | Laser diodes with an etched facet and surface treatment | Electricity | 13 | Active |
| US8638828B1 | Method and system for providing directional light sources with broad spectrum | Electricity | 12 | Active |
| US9166372B1 | Gallium nitride containing laser device configured on a patterned substrate | Electricity | 8 | Active |
| US8848755B1 | Method and system for providing directional light sources with broad spectrum | Electricity | 8 | Active |
| US8211723B2 | Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes | Electricity | 7 | Active |
| US10090644B2 | Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates | Electricity | 6 | Active |
| US9106049B1 | Method and system for providing directional light sources with broad spectrum | Electricity | 6 | Active |
| US9722398B2 | Optical device structure using GaN substrates for laser applications | Electricity | 5 | Active |
| US9837790B1 | Method and system for providing directional light sources with broad spectrum | Electricity | 5 | Active |
| US9608407B1 | Laser diodes with an etched facet and surface treatment | Electricity | 5 | Active |
| US9362720B1 | Method and system for providing directional light sources with broad spectrum | Electricity | 5 | Active |
| US9466949B1 | Gallium nitride containing laser device configured on a patterned substrate | Electricity | 4 | Active |
| US9853420B2 | Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.