CMOS SiGe channel pFET and Si channel nFET devices with minimal STI recess

US8053301B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Daniel Jaeger · Saratoga Springs, US
• Michael V. Aquilino · Wappingers Falls, US
• Christopher V. Baiocco · Newburgh, US

Key dates

• Filing date: Mar 30, 2009
• Grant date: Nov 8, 2011
• Expiry date: Sep 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0188

Abstract

Silicon germanium (SiGe) is epitaxially grown on a silicon channel above nFET and pFET regions of a substrate. SiGe is removed above the nFET regions. A device includes a silicon channel above the nFET regions and a SiGe channel above the pFET regions.