Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen
US8053311B2 · kind B2 · utility
3Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2010 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Sep 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.