Semiconductor device and method of fabricating the same
US8053313B2 · kind B2 · utility
1Cited by
4References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 23, 2008 |
| Grant date | Nov 8, 2011 |
| Priority date | — |
| Expiry date | Apr 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
In a method of fabricating a semiconductor device on a substrate having a pillar pattern, a gate electrode is formed on the pillar pattern without etching the latter. A conductive pattern is filled between adjacent pillar patterns, a spacer is formed above the conductive pattern and surrounding sidewalls of each pillar pattern, and the gate electrode is formed by etching the conductive pattern using the spacer as an etch barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.